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IRGSL6B60KPbF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Download the IRGSL6B60KPbF datasheet PDF. This datasheet also includes the IRGS6B60KPBF variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGS6B60KPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

INSULATED GATE BIPOLAR TRANSISTOR PD - 95644A IRGB6B60KPbF IRGS6B60KPbF.

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free. Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. C G E n-channel VCES = 600V IC = 7.0A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V Absolute Maximum Ratings VCES IC.