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IRHE9130 - (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

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Other Datasheets by International Rectifier (now Infineon)

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IRHE9230 (IRHE9230 / IRHE93230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHE93130 (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 90881C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9130 100K Rads (Si) IRHE93130 300K Rads (Si) RDS(on) 0.30 Ω 0.30 Ω ID -6.5A -6.5A IRHE9130 100V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7389U JANSF2N7389U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to www.DataSheet4U.
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