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IRHLA7970Z4 - RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE

Features

  • n n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLA770Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = -4.5V, TC=25°C ID @ VGS = -4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipatio.

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PD-97306 2N7630M2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) I D IRHLA7970Z4 100K Rads (Si) 1.36Ω -0.56A IRHLA7930Z4 300K Rads (Si) 1.36Ω -0.56A IRHLA7970Z4 60V, Quad P-CHANNEL ™ TECHNOLOGY 14-Lead Flat Pack International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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