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IRHLNA77064 - POWER MOSFET

Download the IRHLNA77064 datasheet PDF. This datasheet also covers the IRHLNA73064 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.

Key Features

  • 5V CMOS and TTL Compatible.
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Ceramic package.
  • Light Weight.
  • Surface Mount.
  • ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHLNA73064_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRHLNA77064 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRHLNA77064. For precise diagrams, and layout, please refer to the original PDF.

RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHLNA77064 100 kRads(Si) IRHLNA73064 300 kRads(Si) RDS(on) ...

View more extracted text
ion Level IRHLNA77064 100 kRads(Si) IRHLNA73064 300 kRads(Si) RDS(on) 0.012 0.012 ID 56A* 56A* Description IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that op

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