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IRHLQ77214 - RADIATION HARDENED LOGIC LEVEL POWER MOSFET

Features

  • n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor.

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PD-97260 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number IRHLQ77214 IRHLQ73214 Radiation Level RDS(on) 100K Rads (Si) 1.0Ω 300K Rads (Si) 1.0Ω ID 2.6A 2.6A 2N7615U6 IRHLQ77214 250V, Quad N-CHANNEL ™ TECHNOLOGY LCC-28 International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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