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IRHLYS797034CM - RADIATION HARDENED LOGIC LEVEL POWER MOSFET

Features

  • n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLYS77034CM Absolute Maximum Ratings Parameter ID@VGS = -4.5V, TC = 25°C ID@VGS = -4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Fac.

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PD-97292A RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level IRHLYS797034CM 100K Rads (Si) IRHLYS793034CM 300K Rads (Si) RDS(on) ID 0.074Ω -20A* 0.074Ω -20A* 2N7625T3 IRHLYS797034CM 60V, P-CHANNEL TECHNOLOGY ™ Low-Ohmic TO-257AA International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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