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IRHMK593160 - RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ V GS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source V.

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IRHMK597160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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Full PDF Text Transcription

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www.DataSheet4U.com PD-96912 RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A* -45A* Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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