IRHMK57160 Datasheet | International Rectifier

PD-97415 RADIATION HARDENED POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMK57160 100K Rads (Si) IRHMK53160 300K Rads (Si) IRHMK54160 500K Rads (Si) IRHMK58160 1000K Rads (Si) RDS(on) 0.013Ω 0.013Ω 0.013Ω 0.013Ω ID 45A- 45A- 45A- 45A- Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching...