IRHMK593160 Datasheet | International Rectifier

.. PD-96912 RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A- -45A- Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These...