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IRHMK57260SE - RADIATION HARDENED POWER MOSFET

Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Sour.

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Full PDF Text Transcription

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PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMK57260SE 100K Rads (Si) RDS(on) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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