IRHMK57260SE Datasheet | International Rectifier

PD-96915 RADIATION HARDENED POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMK57260SE 100K Rads (Si) RDS(on) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages...