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IRHNM57110 - RADIATION HARDENED POWER MOSFET

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Complimentary P-Channel Available IRHNM597110, IRHNMC597110 Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linea.

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PD-97192B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number IRHNM57110 IRHNM53110 Radiation Level RDS(on) 100K Rads (Si) 0.22Ω 300K Rads (Si) 0.22Ω IRHNM57110 JANSR2N7503U8 100V, N-CHANNEL REF: MIL-PRF-19500/743 5 TECHNOLOGY ID QPL Part Number 6.9A JANSR2N7503U8 6.9A JANSF2N7503U8 SMD-0.2 (METAL LID) Refer to Page 10 for 1 Additional Part Number IRHNMC57110 (Ceramic Lid) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/ (mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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