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IRHNM597110 - RADIATION HARDENED POWER MOSFET

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Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID@ VGS = -12V, TC = 25°C ID@ VGS = -12V, TC =100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche.

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PD-97179A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number Radiation Level RDS(on) ID IRHNM597110 100K Rads (Si) 1.2Ω -3.1A IRHNM593110 300K Rads (Si) 1.2Ω -3.1A IRHNM597110 100V, P-CHANNEL 5 TECHNOLOGY ™ SMD-0.2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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