Overview: PD-97192B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number IRHNM57110 IRHNM53110 Radiation Level RDS(on) 100K Rads (Si) 0.22Ω 300K Rads (Si) 0.22Ω IRHNM57110 JANSR2N7503U8 100V, N-CHANNEL
REF: MIL-PRF-19500/743 5 TECHNOLOGY ID QPL Part Number 6.9A JANSR2N7503U8 6.9A JANSF2N7503U8 SMD-0.2
(METAL LID) Refer to Page 10 for 1 Additional Part Number IRHNMC57110 (Ceramic Lid)
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/ (mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
