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IRL2703S - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • 5 2) 1 .2 2 (.0 4 8) 1 0 .1 6 (.40 0 ) R E F. 4 1 .7 8 (.0 7 0) 1 .2 7 (.0 5 0) 1 2 3 1 5 .4 9 (.61 0 ) 1 4 .7 3 (.58 0 ) 5 .2 8 (.2 0 8) 4 .7 8 (.1 8 8) 1.4 0 (.0 55 ) 1.1 4 (.0 45 ) 2X 5 .0 8 ( .20 0) 2.7 9 ( .1 10 ) 2.2 9 ( .0 90 ) 6.4 7 (.2 55 ) 6.1 8 (.2 43 ) 2.6 1 (.1 0 3) 2.3 2 (.0 9 1) 1.39 (.0 55 ) 1.14 (.0 45 ) 8 .8 9 (.35 0 ) R E F. 3X 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .2 5 ( .0 1 0) M A M B 0.5 5 (.0 22 ) 0.4 6 (.0 18 ) N O TES: 1 DIMEN SIO NS AFTER SO LD ER D IP. 2 DIMEN SIO NI.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL2703 Power MOSFET
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IRL2203NLPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 9.1360 PRELIMINARY l l l l l l IRL2703S HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 30V G S RDS(on) = 0.04Ω ID = 24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4.
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