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IRL630 Datasheet POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Overview

Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature.

Key Features

  • , UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave. , Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR.