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IRL630 - Power MOSFET

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated Available.
  • Logic-level gate drive.
  • RDS(on) specified at VGS = 4 V and 5 V.
  • 150 °C operating temperature Available.
  • Fast switching.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.

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Datasheet Details

Part number IRL630
Manufacturer Vishay
File Size 1.13 MB
Description Power MOSFET
Datasheet download datasheet IRL630 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com IRL630 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 V VGS = 5 V 40 5.5 24 Single 0.40 FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature Available • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
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