IRLHM630TRPBF Datasheet | International Rectifier

Features and Benefits Features Low RDSon (<3.5mΩ) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<1.0mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRLHM630TRPBF IRLHM630TR2PBF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Note Form Tape and Reel Tape and Reel Quantity 4000 400 EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Power Dissipation Pulsed Drain Current Max. 30 ±12 21 40 17 Units V g Power Dissipation g c h 40h 2.7 37 160 W W/°C °C Linear Derating Factor Operating Junction and g 0.022 -55 to + 150 Storage Temperature Range Notes  through … are on page 9 1 .irf. © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014 IRLHM630Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/Δ TJ RDS(on) VGS(th) Δ VGS(th) IDSS IGSS gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output...