Datasheet Details
| Part number | IRLI2203G |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 238.90 KB |
| Description | POWER MOSFET |
| Datasheet |
 IRLI2203G Datasheet
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| Part number | IRLI2203G |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 238.90 KB |
| Description | POWER MOSFET |
| Datasheet |
IRLI2203G Datasheet
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Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
Previous Datasheet Index Next Data Sheet PD - 9.1092A IRLI2203G HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist.
= 4.8mm Logic-Level Gate Drive RDS(on) Specified at VGS=5.
| Part Number | Description |
|---|---|
| IRLI2203N | POWER MOSFET |
| IRLI2203NPBF | POWER MOSFET |
| IRLI2505 | POWER MOSFET |
| IRLI2910 | POWER MOSFET |
| IRLI2910PBF | Power MOSFET |
| IRLI3103 | POWER MOSFET |
| IRLI3215PBF | Advanced Process Technology |
| IRLI3303 | HEXFET Power MOSFET |
| IRLI3615 | HEXFET Power MOSFET |
| IRLI3615PBF | POWER MOSFET |