JANSR2N7500U5 - RADIATION HARDENED POWER MOSFET SURFACE MOUNT

International Rectifier (now Infineon)

Datasheet Details

Part number	JANSR2N7500U5
Manufacturer	International Rectifier (now Infineon)
File Size	211.86 KB
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Datasheet	JANSR2N7500U5 Datasheet

Overview

www.DataSheet4U.com PD - 94325A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) Product Summary Part Number IRHE57133SE Radiation Level 100K Rads (Si) RDS(on) 0.13 Ω IRHE57133SE JANSR2N7500U5 130V, N-CHANNEL REF: MIL-PRF-19500/707 5 TECHNOLOGY ID QPL Part Number 9.0A JANSR2N7500U5 LCC-18 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

Key Features

n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
JANSR2N7519T3	30V P-Channel MOSFET
JANSR2N7520T3	RADIATION HARDENED POWER MOSFET
JANSR2N7524T1	P-CHANNEL POWER MOSFET
JANSR2N7547T3	RADIATION HARDENED POWER MOSFET
JANSR2N7549U2	P-CHANNEL POWER MOSFET
JANSR2N7550U2	POWER MOSFET
JANSR2N7583U2	POWER MOSFET
JANSR2N7583U2A	Radiation Hardened Power MOSFET
JANSR2N7584T1	POWER MOSFET
JANSR2N7587U3	N-Channel Power MOSFET