| Part number | JANSR2N7547T3 |
|---|---|
| Datasheet | JANSR2N7547T3-InternationalRectifier.pdf |
| File Size | 169.36 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | RADIATION HARDENED POWER MOSFET |
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PD-94343A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary IRHY597130CM JANSR2N7547T3 100V, P-CHANNEL REF: These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| JANSR2N7549U2 | P-CHANNEL POWER MOSFET |
| JANSR2N7500U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
| JANSR2N7519T3 | 30V P-Channel MOSFET |
| JANSR2N7520T3 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7524T1 | P-CHANNEL POWER MOSFET |
| JANSR2N7550U2 | POWER MOSFET |
| JANSR2N7583U2 | POWER MOSFET |
| JANSR2N7583U2A | Radiation Hardened Power MOSFET |
| JANSR2N7584T1 | POWER MOSFET |
| JANSR2N7587U3 | N-Channel Power MOSFET |
