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JANSR2N7547T3 - RADIATION HARDENED POWER MOSFET

Key Features

  • n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight n ESD Rating: Class 1C per MIL-STD-750, Method Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS EAS IAR.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANSR2N7549U2 P-CHANNEL POWER MOSFET
JANSR2N7500U5 RADIATION HARDENED POWER MOSFET SURFACE MOUNT
JANSR2N7519T3 30V P-Channel MOSFET
JANSR2N7520T3 RADIATION HARDENED POWER MOSFET
JANSR2N7524T1 P-CHANNEL POWER MOSFET

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PD-94343A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary IRHY597130CM JANSR2N7547T3 100V, P-CHANNEL REF: MIL-PRF-19500/712 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A JANSR2N7547T3 IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A JANSF2N7547T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.