JANSR2N7547T3 Datasheet | International Rectifier

Features : n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight n ESD Rating: Class 1C per MIL-STD-750, Method Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight Pre-Irradiation Units -12.5 -8.0 -50 75 W 0.6 W/°C ±20 V 94 m J -12.5 7.5 m J -4.3 V/ns -55 to 150 °C 300 (0.063in/1.6mm from case for 10s ) 4.3 ( Typical ) g For footnotes refer to the last page .irf. 11/15/12 IRHY597130CM, JANSR2N7547T3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min...