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FSJ260R - N-Channel Power MOSFETs

Download the FSJ260R datasheet PDF. This datasheet also covers the FSJ260D variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Key Features

  • 44A, 200V, rDS(ON) = 0.050Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 17nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FSJ260D-Intersil.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FSJ260D, FSJ260R June 1998 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 44A, 200V, rDS(ON) = 0.