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FSJ260R - N-Channel Power MOSFETs

Download the FSJ260R datasheet PDF. This datasheet also covers the FSJ260D variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Features

  • 44A, 200V, rDS(ON) = 0.050Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 17nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FSJ260D-Intersil.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FSJ055D N-Channel Power MOSFETs Intersil Corporation
FSJ055R N-Channel Power MOSFETs Intersil Corporation
FSJ163D N-Channel Power MOSFETs Intersil Corporation
FSJ9055D 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Intersil Corporation
FSJ9055R 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Intersil Corporation

Other Datasheets by Intersil (Renesas)

Part Number Description
FSJ260D N-Channel Power MOSFETs
FSJ264D N-Channel Power MOSFETs
FSJ264R N-Channel Power MOSFETs
FSJ160D N-Channel Power MOSFETs
FSJ160R N-Channel Power MOSFETs

Full PDF Text Transcription

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FSJ260D, FSJ260R June 1998 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 44A, 200V, rDS(ON) = 0.
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