ISL73023SEH transistor equivalent, 60a enhancement mode gan power transistor.
* Very low rDS(ON) 5mΩ (typical)
* Ultra low total gate charge 14nC (typical)
* SEE tolerance (VDS = 100V, VGS = 0V)
* Characterized at LET 86 MeV
*cm2.
for these devices include commercial aerospace, medical, and nuclear power generation.
GaN’s exceptionally high electron.
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