ISL73020SEH Overview
Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include mercial aerospace, medical, and nuclear power generation.
ISL73020SEH Key Features
- Very low rDS(ON) 3.5mΩ (typical)
- Ultra low total gate charge 19nC (typical)
- ISL70020SEH radiation acceptance testing
- ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (see the SEE report for details) ○ SEL/SEB LETTH (VDS = 40V, VGS = 0V)
- Ultra small hermetically sealed 4 Ld Surface Mount
- Full military-temperature range operation ○ TA = -55°C to +125°C ○ TJ = -55°C to +150°C
- 55 to +125
- 55 to +125
- 55 to +125