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ISL73020SEH - 65A Enhancement Mode GaN Power Transistors

Download the ISL73020SEH datasheet PDF. This datasheet also covers the ISL70020SEH variant, as both devices belong to the same 65a enhancement mode gan power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Very low rDS(ON) 3.5mΩ (typical).
  • Ultra low total gate charge 19nC (typical).
  • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • SEE hardness (see the SEE report for details) ○ SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV.
  • cm2/mg(Si).
  • Ultra small hermetically sealed 4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ISL70020SEH-Intersil.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
ISL73023SEH 60A Enhancement Mode GaN Power Transistor
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ISL73002SEH Radiation Hardened and SEE Hardened 12A Synchronous Buck Regulator
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.