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ISL73023SEH - 60A Enhancement Mode GaN Power Transistor

Download the ISL73023SEH datasheet PDF. This datasheet also covers the ISL70023SEH variant, as both devices belong to the same 60a enhancement mode gan power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

3.

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Key Features

  • Very low rDS(ON) 5mΩ (typical).
  • Ultra low total gate charge 14nC (typical).
  • SEE hardness (see SEE report for details).
  • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV.
  • cm2/mg(Si).
  • ISL70023SEH radiation accepting testing.
  • High dose rate (50-300rad(Si)/s): 100krad(Si).
  • Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • ISL73023SEH radiation accepting testing.
  • Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • Ultra small hermetically sealed 4 L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ISL70023SEH-Intersil.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Intersil (now Renesas)

Part Number Description
ISL73020SEH 65A Enhancement Mode GaN Power Transistors
ISL73024SEH 7.5A Enhancement Mode GaN Power Transistor
ISL73002SEH Radiation Hardened and SEE Hardened 12A Synchronous Buck Regulator
ISL73005SEH Radiation Hardened Dual Output 3A Synchronous Buck and LDO Regulator
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor Datasheet The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. The GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.