ISL73024SEH Overview
ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include mercial aerospace, medical, and nuclear power generation.
ISL73024SEH Key Features
- Very low rDS(ON) 45mΩ (typical)
- Ultra low total gate charge 2.5nC (typical)
- SEE hardness (see SEE report for details)
- SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV-cm2/mg(Si)
- ISL70024SEH radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- ISL73024SEH radiation acceptance (see TID report)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package