ISL73024SEH transistor equivalent, 7.5a enhancement mode gan power transistor.
* Very low rDS(ON) 45mΩ (typical)
* Ultra low total gate charge 2.5nC (typical)
* SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 160V, V.
for these devices include commercial aerospace, medical, and nuclear power generation.
GaN’s exceptionally high electron.
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