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Intersil Electronic Components Datasheet

BUZ76 Datasheet

N-Channel Power MOSFET

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Semiconductor
Data Sheet
BUZ76
October 1998 File Number 2264.1
3A, 400V, 1.800 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ76)
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
/Subject switching regulators, switching converters, motor drivers,
(3A,
relay drivers, and drivers for high power bipolar switching
• 3A, 400V
• rDS(ON) = 1.800
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
400V, transistors requiring high speed and low gate drive power.
1.800 This type can be operated directly from integrated circuits.
Ohm, N- Formerly developmental type TA17404.
Channel
Power Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
MOS-
FET)
PART NUMBER
PACKAGE
BUZ76
TO-220AB
BRAND
BUZ76
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
/Author NOTE: When ordering, use the entire part number.
Symbol
()
/Key-
D
words
(Harris
G
Semi-
conduc-
S
tor, N-
Channel
Power Packaging
MOS-
FET,
JEDEC TO-220AB
TO-
220AB)
/Creator
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998


Intersil Electronic Components Datasheet

BUZ76 Datasheet

N-Channel Power MOSFET

No Preview Available !

BUZ76
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ76
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400
400
3
12
±20
40
0.32
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V
400 - - V
VGS(TH)
IDSS
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 400V, VGS = 0V
TJ = 125oC, VDS = 400V, VGS = 0V
2.1 3
4
- 20 250
- 100 1000
V
µA
µA
IGSS VGS = 20V, VDS = 0V
- 10 100 nA
rDS(ON) ID = 1.5A, VGS = 10V (Figure 8)
- 1.65 1.800
gfs VDS = 25V, ID = 3A (Figure 11)
2.1 2.5
-
S
td(ON) VCC = 30V, ID 2.5A, VGS = 10V, RGS = 50Ω,
-
15
20
ns
tr RL = 10. (Figures 14, 15)
- 40 60
ns
td(OFF)
- 50 65
ns
tf
- 30 40
ns
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10)
- 300 500
- 50 80
pF
pF
CRSS
RθJC
RθJA
- 35 60
pF
3.1
oC/W
75 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
ISD TC = 25oC
--
3
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISDM
VSD
trr
QRR
TJ = 25oC, ISD = 6A, VGS = 0V
TJ = 25oC, ISD = 3A, dISD/dt = 100A/µs,
VR = 100V
- - 12
- 1.1 1.4
- 300
-
- 2.5
-
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
2


Part Number BUZ76
Description N-Channel Power MOSFET
Maker Intersil Corporation
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BUZ76 Datasheet PDF






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