BUZ76 Datasheet | Specifications & PDF Download

BUZ76A Semiconductor Data Sheet October 1998 File Number 2265.1 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET Features • 2.6A, 400V [ /Title Thi

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BUZ76A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ76A Voss 400 V RoS(on) 2.50 10 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS

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BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 VDS 400 V ID 3A RDS(on)

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BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss RoS(on) 10 BUZ76 400 V 1.80 3A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS •

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BUZ76 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RA

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isc N-Channel Mosfet Transistor BUZ76 ·FEATURES ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·F

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isc N-Channel Mosfet Transistor BUZ76A ·FEATURES ·2.6A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Charact

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BUZ76 Semiconductor Data Sheet October 1998 File Number 2264.1 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 3A, 400V [ /Title This is

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BUZ 76 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 A VDS 400 V ID 2.7 A

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