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CD4019BMS Datasheet

CMOS Quad AND/OR Select Gate

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CD4019BMS
November 1994
CMOS Quad AND/OR Select Gate
Features
Pinout
• High Voltage Type (20V Rating)
• Medium Speed Operation tPHL = tPLH = 60ns (typ.) at
CL = 50pF, VDD = 10V
• Standardized Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
• Maximum Input Current of 1µa at 18V Over Full Pack-
age-Temperature Range;
- 100nA at 18V and 25oC
B4 1
A3 2
B3 3
A2 4
B2 5
A1 6
B1 7
VSS 8
CD4019BMS
TOP VIEW
16 VDD
15 A4
14 Kb
13 D4 = A4 Ka + B4 Kb
12 D3 = A3 Ka + B3 Kb
11 D2 = A2 Ka + B2 Kb
10 D1 = A1 Ka + B1 Kb
9 Ka
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
Applications
Functional Diagram
Ka Kb
9 14
VDD
16
• And/Or Select Gating
• Shift-Right/Shift-Left Registers
• True/Complement Selection
• AND/OR/Exclusive-OR Selection
Description
CD4019BMS types consist of four AND/OR select gate con-
figurations, each consisting of two 2-input AND gates driving
a single 2-input OR gate. Selection is accomplished by con-
trol bits Ka and Kb. In addition to selection of either channel
A or channel B information, the control bits can be applied
simultaneously to accomplish the logical A + B function.
15
A4
B4 1
A3 2
B3 3
A2 4
B2 5
6
A1
7
B1
13
D4
12 D3
D4 = (A4 Ka) + (B4 Kb) 11 D2
10 D1
8
VSS
The CD4019BMS is supplied in these 16-lead outline pack-
ages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4T
H1E
H3X
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-307
File Number 3299


Intersil Electronic Components Datasheet

CD4019BMS Datasheet

CMOS Quad AND/OR Select Gate

No Preview Available !

Specifications CD4019BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θja
Ceramic DIP and FRIT Package . . . . . 80oC/W
θjc
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
LIMITS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
SUBGROUPS TEMPERATURE MIN MAX UNITS
Supply Current
IDD VDD = 20V, VIN = VDD or GND
1
+25oC
- 2 µA
2
+125oC
- 200 µA
VDD = 18V, VIN = VDD or GND
3
-55oC
- 2 µA
Input Leakage Current
IIL VIN = VDD or GND VDD = 20
1
+25oC
-100
-
nA
2
+125oC
-1000 -
nA
VDD = 18V
3
-55oC
-100
-
nA
Input Leakage Current
IIH VIN = VDD or GND VDD = 20
1
+25oC
- 100 nA
2
+125oC
- 1000 nA
VDD = 18V
3
-55oC
- 100 nA
Output Voltage
VOL15 VDD = 15V, No Load
1, 2, 3
+25oC, +125oC, -55oC -
50 mV
Output Voltage
VOH15 VDD = 15V, No Load (Note 3)
1, 2, 3
+25oC, +125oC, -55oC 14.95
-
V
Output Current (Sink)
IOL5 VDD = 5V, VOUT = 0.4V
1
+25oC
0.53 - mA
Output Current (Sink)
IOL10 VDD = 10V, VOUT = 0.5V
1
+25oC
1.4 - mA
Output Current (Sink)
IOL15 VDD = 15V, VOUT = 1.5V
1
+25oC
3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V
1
+25oC
- -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V
1
+25oC
- -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V
1
+25oC
- -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V
1
+25oC
- -3.5 mA
N Threshold Voltage
VNTH VDD = 10V, ISS = -10µA
1
+25oC
-2.8 -0.7 V
P Threshold Voltage
VPTH VSS = 0V, IDD = 10µA
1
+25oC
0.7 2.8
V
Functional
F VDD = 2.8V, VIN = VDD or GND
7
+25oC
VOH > VOL < V
VDD = 20V, VIN = VDD or GND
7
+25oC
VDD/2 VDD/2
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
-55oC
Input Voltage Low
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC -
1.5 V
(Note 2)
Input Voltage High
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5
-
V
(Note 2)
Input Voltage Low
VIL VDD = 15V, VOH > 13.5V,
1, 2, 3
+25oC, +125oC, -55oC -
4V
(Note 2)
VOL < 1.5V
Input Voltage High
VIH VDD = 15V, VOH > 13.5V,
1, 2, 3
+25oC, +125oC, -55oC 11
-
V
(Note 2)
VOL < 1.5V
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented.
is 0.050V max.
2. Go/No Go test with limits applied to inputs
7-308


Part Number CD4019BMS
Description CMOS Quad AND/OR Select Gate
Maker Intersil Corporation
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CD4019BMS Datasheet PDF






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