* 10A, -100V, rDS(ON) = 0.280Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R
FSS913A0R Datasheet (56.38 KB)
FSS913A0R
Intersil Corporation
56.38 KB
10a/ -100v/ 0.280 ohm/ radiation hardened/ segr resistant/ p-channel power mosfets.
FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The D.
📁 Related Datasheet
FSS913A0D 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs (Intersil Corporation)
FSS9130D P-Channel Power MOSFET (Intersil Corporation)
FSS9130R P-Channel Power MOSFETs (Intersil Corporation)
FSS9230D P-Channel Power MOSFETs (Intersil Corporation)
FSS9230R P-Channel Power MOSFETs (Intersil Corporation)
FSS923A0D P-Channel Power MOSFETs (Intersil Corporation)
FSS923A0R P-Channel Power MOSFETs (Intersil Corporation)
FSS101 P-Channel Silicon MOSFET (Sanyo Semicon Device)
FSS104 DC/DC Converter Applications (Sanyo Semicon Device)
FSS106 P-Channel Silicon MOSFET (Sanyo Semicon Device)
