-100V Datasheet | Specifications & PDF Download

® TDA7294S 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±45V) DMOS POWER STAGE HIGH OUTPUT POWER (100W @ THD

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Silan Microelectronics SVG108R5NAM(T)_Datasheet 94A, 100V N-CHANNEL MOSFET DESCRIPTION SVG108R5NAM(T) is an N-channel enhancement mode power MOS fi

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A Product Line of Diodes Incorporated ZXMP10A17G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > -100V  IC = -5A H

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2SK1849-VB 2SK1849-VB Datasheet N-Channel 100 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.240 at VGS = 10 V 2.0 100 0

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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RSD100N10FRA 　　 Nch 100V 10A Power MOSFET 　　 Datasheet lOutline VDSS 100V TO-252 　 RDS(on)(Max.) 133mΩ SC-63 ID ±10A CPT3 PD 20W 　 　　　

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FQD8P10 / FQU8P10 QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors ar

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SEMICONDUCTOR TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. WAVE FORM CLIPPER FEATURES hSmall Package : USC

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IGBT Module series for AT-NPC 3-level 12-in-1 Features Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level

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Silan Microelectronics SVG105R4NT(S)(KL)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG105R4NT(S)(KL) is an N-channel enhancement mode power

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() CRSZ019N10N4Q SkyMOS4 N-MOSFET 100V, 1.5mΩ, 310A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exce

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() Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • AEC-Q101 Qualified

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Features  BVCEO > -100V  BVECO > -7V  IC = -1A Continuous Collector Current  ICM = -3A Peak Collector Current  VCE(SAT) < -225mV @ -1A  RCE(SAT)

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AOD2910 100V N-Channel MOSFET General Description The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient

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SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

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