Datasheet4U.com - HGT1S12N60B3DS

HGT1S12N60B3DS Datasheet, IGBT, Intersil Corporation

HGT1S12N60B3DS Datasheet, IGBT, Intersil Corporation

Page 1 of HGT1S12N60B3DS Page 2 of HGT1S12N60B3DS Page 3 of HGT1S12N60B3DS

HGT1S12N60B3DS Features and benefits

HGT1S12N60B3DS Features and benefits

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

HGT1S12N60B3DS Application

HGT1S12N60B3DS Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

HGT1S12N60B3DS Description

HGT1S12N60B3DS Description

N-Channel IGBT

Image gallery

Page 1 of HGT1S12N60B3DS Page 2 of HGT1S12N60B3DS Page 3 of HGT1S12N60B3DS

TAGS

HGT1S12N60B3DS
N-Channel
IGBT
Intersil Corporation

Manufacturer


Intersil Corporation

Related datasheet

HGT1S12N60B3S

HGT1S12N60A4DS

HGT1S12N60A4S

HGT1S12N60A4S9A

HGT1S12N60C3

HGT1S12N60C3DS

HGT1S12N60C3S

HGT1S10N120BNS

HGT1S11N120CNS

HGT1S14N36G3VL

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts