of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state.

HGT1S15N120C3S

HGT1S10N120BNS

HGT1S11N120CNS

HGT1S12N60A4DS

HGT1S12N60A4S

HGT1S12N60A4S9A

HGT1S12N60B3DS

HGT1S12N60B3S

HGT1S12N60C3

HGT1S12N60C3DS

HGT1S12N60C3S

HGT1S14N36G3VL

HGT1S14N36G3VLS