logo

HGT1S7N60B3DS Datasheet, Intersil Corporation

HGT1S7N60B3DS diode equivalent, 14a/ 600v/ ufs series n-channel igbts with anti-parallel hyperfast diode.

HGT1S7N60B3DS Avg. rating / M : 1.0 rating-13

datasheet Download

HGT1S7N60B3DS Datasheet

Features and benefits

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

Image gallery

HGT1S7N60B3DS Page 1 HGT1S7N60B3DS Page 2 HGT1S7N60B3DS Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts