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HGT1S7N60B3DS - 14A 600V UFS Series N-Channel IGBT

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Fairchild Semiconductor

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HGT1S7N60B3DS 14A 600V UFS Series N-Channel IGBT by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – HGT1S7N60B3DS

Datasheet Details

Part number	HGT1S7N60B3DS
Manufacturer	Fairchild Semiconductor
File Size	163.69 KB
Description	14A 600V UFS Series N-Channel IGBT
Datasheet	HGT1S7N60B3DS Datasheet
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Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057). The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |