Datasheet Specifications
- Part number
- HGT1S7N60B3DS
- Manufacturer
- Intersil Corporation
- File Size
- 94.32 KB
- Datasheet
- HGT1S7N60B3DS_IntersilCorporation.pdf
- Description
- 14A 600V UFS Series N-Channel IGBT
Description
HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 File Number 4413.2 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HG.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The dHGT1S7N60B3DS Distributors
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