* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The d
HGT1S7N60B3DS Datasheet (94.32 KB)
HGT1S7N60B3DS
Intersil Corporation
94.32 KB
14a/ 600v/ ufs series n-channel igbts with anti-parallel hyperfast diode.
HGTP7N60B3D, HGT1S7N60B3DS
Data Sheet January 2000 File Number 4413.2
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
The HG.
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