HGTD8P50G1 igbts equivalent, 8a/ 500v p-channel igbts.
* 8A, 500V
* 3.7V VCE(SAT)
* Typical Fall Time - 1800ns
* High Input Impedance
* TJ = +150oC
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Description
The HGTD8P50G1 and the H.
such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complem.
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired .
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