HGTG20N50C1D datasheet, igbt equivalent, Intersil Corporation

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HGTG20N50C1D Features and benefits

* 20A, 500V
* Latch Free Operation
* Typical Fall Time < 500ns
* High Input Impedance
* Low Conduction Loss
* With Anti-Parallel Diode
* tRR <.

HGTG20N50C1D Application

operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies an.

HGTG20N50C1D Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-.

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