HGTG20N120 igbt equivalent, n-channel igbt.
* 34A, 1200V
* Latch Free Operation
* Typical Fall Time - 780ns
* High Input Impedance
* Low Conduction Loss
Description
The HGTG20N120E2 is a MOS ga.
operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies an.
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 167.55KB)