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Intersil Electronic Components Datasheet

IRF614 Datasheet

N-Channel Power MOSFET

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January 1998
Features
• 2.0A, 250V
• rDS(ON) = 2.0
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF614
TO-220AB
IRF614
NOTE: When ordering, use the entire part number.
IRF614
2.0A, 250V, 2.0 Ohm,
N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of opera-
tion. This power MOSFET is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17443.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 3273.1


Intersil Electronic Components Datasheet

IRF614 Datasheet

N-Channel Power MOSFET

No Preview Available !

IRF614
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF614
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250
250
2.0
1.3
8.0
±20
20
0.16
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . Tpkg
61
-55 to 150
300
260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
BVDSS VGS = 0V, ID = 250µA, (Figure 10)
VGS(TH) VGS = VDS, ID = 250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V
TJ = 125oC
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V,
(Figure 7)
250 -
-
V
2.0 - 4.0
V
- - 25 µA
- - 250 µA
2.0 -
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
IGSS
rDS(ON)
gfs
VGS = ±20V
VGS = 10V, ID = 2.5A, (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A,
(Figure 12)
- - ±100 nA
- 1.6 2.0
A
0.8 1.2 -
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
VDD = 0.5 x Raterd BVDSS, ID 2.0A, RL = 61
VGS = 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
VGS = 10V, ID = 2.0A, VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
-
-
-
-
-
-
-
-
-
-
8.9 13
12 18
18 27
8.9 15
9.6 14.4
2.4 3.6
4.5 6.7
180 -
53 -
14 -
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
2


Part Number IRF614
Description N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 7 Pages
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