* 4.5A, 500V
* rDS(ON) = 1.500Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF830
Intersil Corporation
56.16 KB
N-channel power mosfet.
IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .
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