IRF830 Datasheet | Specifications & PDF Download

www.vishay.com IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Q

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IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200407 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF830 / HIRF830F N-CHA

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IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<

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IRF830 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge, l

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF830A FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast

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www.vishay.com IRF830A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized fo

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SEMICONDUCTOR IRF830 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4.5A, 500Volts) DESCRIPTION The Nell IRF830 are N-Channel enh

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PD- 92006A SMPS MOSFET IRF830AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Pow

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www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (n

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www.vishay.com IRF830 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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PD- 92006A SMPS MOSFET IRF830AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Pow

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IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values (unless otherwise specif

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StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized fo

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• Lead-Free PD - 94881 IRF830PbF www.irf.com 1 12/10/03 IRF830PbF 2 www.irf.com IRF830PbF www.irf.com 3 IRF830PbF 4 www.irf.com IRF830PbF ww

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IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Hig

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