IRF830 Datasheet | Specifications & PDF Download

StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized fo

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www.vishay.com IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Q

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MOSFET IRF830 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;

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www.vishay.com IRF830 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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isc N-Channel MOSFET Transistor IRF830FI DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200407 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF830 / HIRF830F N-CHA

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PD- 92006A SMPS MOSFET IRF830AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Pow

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IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values (unless otherwise specif

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StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized fo

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IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<

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IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<

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www.vishay.com IRF830A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Hig

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IRF830B/IRFS830B November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF830A FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast

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• Lead-Free PD - 94881 IRF830PbF www.irf.com 1 12/10/03 IRF830PbF 2 www.irf.com IRF830PbF www.irf.com 3 IRF830PbF 4 www.irf.com IRF830PbF ww

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IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate C

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® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on)

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