Philips Semiconductors Product specification Pow.
IRF830 - Power MOSFET
Power MOSFET IRF830, SiHF830 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38.IRF830 - N-Channel MOSFET Transistor
MOSFET IRF830 N-channel mosfet transistor INCHANGE Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;.IRF830PBF - N-Channel Type Power MOSFET
IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate C.IRF830A - Power MOSFET
www.vishay.com IRF830A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs.IRF830AS - Power MOSFET
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL www.vishay.com Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-2 G SD D G S G S N-Channel.IRF830AL - Power MOSFET
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL www.vishay.com Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-2 G SD D G S G S N-Channel.IRF830A - N-Channel Power MOSFET
SEMICONDUCTOR IRF830 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4.5A, 500Volts) DESCRIPTION The Nell IRF830 are N-Channel enh.IRF830FI - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IRF830FI DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source .IRF830PBF - POWER MOSFET
• Lead-Free PD - 94881 IRF830PbF www.irf.com 1 12/10/03 IRF830PbF 2 www.irf.com IRF830PbF www.irf.com 3 IRF830PbF 4 www.irf.com IRF830PbF ww.IRF830 - N-Channel Power MOSFET
® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) .IRF8304MPBF - Power MOSFET
IRF8304MPbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized .IRF8306MPBF - Power MOSFET
IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specif.IRF8301MTRPBF - Power MOSFET
StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized fo.IRF8301MPbF - Power MOSFET
StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized fo.IRF8308MPBF - POWER MOSFET
IRF8308MPbF DirectFET Power MOSFET l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Low Profile (<.IRF8308MTRPbF - POWER MOSFET
IRF8308MPbF DirectFET Power MOSFET l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Low Profile (<.IRF8302MPBF - Power MOSFET
IRF8302MPbF l RoHs Compliant and Halogen-Free l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ul.IRF830S - Power MOSFET
www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (n.IRF830L - Power MOSFET
www.vishay.com IRF830S, SiHF830S, IRF830L, SiHF830L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (n.