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IRFP360 - N-Channel Power MOSFET

Features

  • 23A, 400V.
  • rDS(ON) = 0.200Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP360.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17464. Features • 23A, 400V • rDS(ON) = 0.
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