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Intersil Electronic Components Datasheet

JANSR2N7272 Datasheet

8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET

No Preview Available !

JANSR2N7272
Formerly FRL130R4
June 1998
8A, 100V, 0.180 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 8A, 100V, rDS(ON) = 0.180
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7272
TO-205AF
BRAND
JANSR2N7272
Die family TA17631.
MIL-PRF-19500/604.
Description
The Intersil Corporation,has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-Chan-
nel and P-Channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as
25m. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current
limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (no) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page:
http://www.semi.harris.com. Contact your local Intersil
Sales Office for additional information.
Symbol
D
G
Package
TO-205AF
S
DG S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-3
File Number 4297.2


Intersil Electronic Components Datasheet

JANSR2N7272 Datasheet

8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET

No Preview Available !

JANSR2N7272
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
JANSR2N7272
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
100
8
5
24
±20
25
10
0.20
V
V
A
A
A
V
W
W
W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJC, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
24
8
24
-55 to 150
300
A
A
A
oC
oC
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on slash sheet)
Gate Charge at 10V
Threshold Gate Charge (Not on slash sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (10)
Qg (TH)
Qgs
Qgd
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
TC = -55oC
TC = 25oC
TC = 125oC
VDS = 80V,
VGS = 0V
TC = 25oC
TC = 125oC
VGS = ±20V
TC = 25oC
TC = 125oC
VGS = 10V, ID = 8A
ID = 5A,
VGS = 10V
TC = 25oC
TC = 125oC
VDD = 50V, ID = 8A,
RL = 6.3, VGS = 10V,
RGS = 25
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V,
ID = 8A
100
-
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- -V
- 5.0 V
- 4.0 V
- -V
- 25 µA
- 250 µA
- 100 nA
- 200 nA
- 1.51 V
-
0.180
-
0.360
- 35 ns
- 210 ns
- 200 ns
- 145 ns
- 142 nC
- 76 nC
- 4 nC
- 13 nC
- 38 nC
- 5.0 oC/W
- 175 oC/W
2-4


Part Number JANSR2N7272
Description 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET
Maker Intersil Corporation
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JANSR2N7272 Datasheet PDF






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