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JANSR2N7281 Datasheet

Radiation Hardened/ N-Channel Power MOSFET

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Formerly FRL430R4
Data Sheet
JANSR2N7281
November 1998
File Number 4294
Radiation Hardened, N-Channel
Power MOSFET
The Intersil has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-
Channel and P-Channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as
25m. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without
current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to exhibit
minimal characteristic changes to total dose (GAMMA) and
neutron (no) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page: www.semi.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7281
TO-205AF
BRAND
JANSR2N7281
Die family TA17635.
MIL-PRF-19500/604.
Features
• 2A, 500V, rDS(ON) = 2.50
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 8nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E12
Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
Symbol
D
G
S
Package
TO-205AF
DG S
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

JANSR2N7281 Datasheet

Radiation Hardened/ N-Channel Power MOSFET

No Preview Available !

JANSR2N7281
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JANSR2N7281
500
500
2
1
6
±20
25
10
0.20
6
2
6
-55 to 150
300
1.0
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (10)
Qg (TH)
Qgs
Qgd
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
VDS = 400V,
VGS = 0V
VGS = ±20V
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 10V, ID = 2A
ID = 1A,
VGS = 10V
TC = 25oC
TC = 125oC
VDD = 250V, ID = 2A,
RL = 125, VGS = 10V,
RGS =25
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 250V,
ID = 2A,
RL = 125
MIN TYP MAX UNITS
500 - - V
- - 5.0 V
2.0 - 4.0 V
1.0 - - V
- - 25 µA
- - 250 µA
- - 100 nA
200 nA
5.25 V
- - 2.50
- - 6.50
- - 46 ns
- - 58 ns
- - 208 ns
- - 54 ns
- - 130 nC
- - 64 nC
- - 4 nC
- - 12 nC
- - 32 nC
- - 5.0 oC/W
- - 175 oC/W
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 2A
ISD = 2A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
0.6 - 1.8
V
- - 900 ns
4-2


Part Number JANSR2N7281
Description Radiation Hardened/ N-Channel Power MOSFET
Maker Intersil Corporation
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