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Intersil Electronic Components Datasheet

RFL4N12 Datasheet

4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs

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RFL4N12 pdf
Semiconductor
September 1998
RFL4N12,
RFL4N15
4A, 120V and 150V, 0.400 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFL4N
12,
RFL4N1
5)
/Subject
(4A,
120V
and
150V,
0.400
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
205AF)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 4A, 120V and 150V
• rDS(ON) = 0.400
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL4N12
TO-205AF
RFL4N12
RFL4N15
TO-205AF
RFL4N15
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9192.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1462.2


Intersil Electronic Components Datasheet

RFL4N12 Datasheet

4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFL4N12 pdf
RFL4N12, RFL4N15
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
RFL4N12
120
120
4
15
±20
8.33
0.0667
-55 to 150
260
RFL4N15
150
150
4
15
±20
8.33
0.0667
-55 to 150
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFL4N12
BVDSS ID = 250µA, VGS = 0V
120 - - V
RFL4N15
150 - - V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA (Figure 8)
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±20V, VDS = 0V
ID = 4A, VGS = 10V
ID = 4A, VGS = 10V (Figures 6, 7)
VDD = 75V, ID 2A, RG = 50, VGS = 10V
(Figures 10, 11, 12)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 9)
2-4V
- - 1 µA
- - 25 µA
- - ±100 nA
- - 1.6 V
- - 0.400
- 40 60 ns
- 165 250 ns
- 90 135 ns
- 90 135 ns
- - 850 pF
- - 230 pF
- - 100 pF
- - 15 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Reverse Recovery Time
trr ISD = 2A, dISD/dt = 100A/µs
NOTE:
2. Pulse Test: pulse duration 300µs max, duty cycle 2%.
1.4
200 -
V
ns
5-2


Part Number RFL4N12
Description 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 4 Pages
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2 RFL4N15 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs Intersil Corporation
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