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Intersil Electronic Components Datasheet

RFP10P03L Datasheet

10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET

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RFP10P03L pdf
RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet
July 1999 File Number 3515.2
10A, 30V, 0.200 Ohm, Logic Level,
P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49205.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD10P03L
TO-251AA
10P03L
RFD10P03LSM
TO-252AA
10P03L
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 10A, 30V
• rDS(ON) = 0.200
• Temperature Compensating PSPICE® Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Symbol
D
G
S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
7-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP10P03L Datasheet

10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET

No Preview Available !

RFP10P03L pdf
RFD10P03L, RFD10P03LSM, RFP10P03L
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specifie
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20KΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
(0.063in (1.6mm) from case for 10s)
RFD10P03L, RFD10P03LSM,
RFP10P03L
-30
-30
±10
10
See Figure 5
Refer to UIS Curve
65
0.43
-55 to 175
300
UNITS
V
V
V
A
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BVDSS
VGS(TH)
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 12)
VDS = -30V,
TC = 25oC
VGS = 0V
TC = 150oC
VGS = ±10V
Drain to Source On Resistance
(Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-5)
Qg(TH)
ID = 10A, VGS = -5V (Figures 9, 10)
ID = 10A, VGS = -4.5V (Figures 9, 10)
VDD = 15V, ID 10A, RL = 1.5,
RGS = 5Ω, VGS = -5V
(Figure 13)
VGS = 0 to -10V
VGS = 0 to -5V
VGS = 0 to -1V
VDD = -24V, ID 10A,
RL = 2.4
Ig(REF) = -0.25mA
(Figure 14)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 15)
RFD10P03L, RFD10P03LSM
RFP10P03L
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Forward Voltage
VSD
Reverse Recovery Time
trr
NOTE:
2. Pulse Test: Pulse width 300µs, Duty Cycle 2%.
TEST CONDITIONS
ISD = -10A
ISD = -10A, dISD/dt = -100A/µs
MIN
-30
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP
-
-
-
-
-
-
-
15
50
35
20
-
25
13
1.2
1035
340
35
-
-
MAX
-
-2
-1
-50
±100
0.200
0.220
100
-
-
-
-
80
30
16
1.5
-
-
-
2.30
100
80
UNITS
V
V
µA
µA
nA
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
oC/W
TYP MAX UNITS
- -1.5 V
- 75 ns
7-4


Part Number RFP10P03L
Description 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
Maker Intersil Corporation
Total Page 8 Pages
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RFP10P03L pdf
RFP10P03L Datasheet PDF
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