900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Intersil Electronic Components Datasheet

RFP10P15 Datasheet

-10A/ -150V/ 0.500 Ohm/ P-Channel Power MOSFET

No Preview Available !

Data Sheet
RFP10P15
October 1999 File Number 1595.2
-10A, -150V, 0.500 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9404.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP10P15
TO-220AB
RFP10P15
NOTE: When ordering, include the entire part number.
Features
• -10A, -150V
• rDS(ON) = 0.500
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP10P15 Datasheet

-10A/ -150V/ 0.500 Ohm/ P-Channel Power MOSFET

No Preview Available !

RFP10P15
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20K(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP10P15
-150
-150
10
30
±20
75
0.6
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
BVDSS
VGS(TH)
IDSS
ID = 250µA, VGS = 0
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TC = 125oC
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = ±20V, VDS = 0
ID = 10A, VGS = -10V
ID = 10A, VGS = -10V, (Figures 6, 7)
ID 10A, VDS = -75V, RG = 50
RL = 7.5, VGS = -10V
(Figures 10, 11, 12)
VGS = 0V, VDS = -25V
f = 1MHz
(Figure 9)
RFM10P12, RFM10P15
RFP10P12, RFP10P15
MIN TYP MAX UNITS
-150
-
-
V
-2 - -4 V
- - 1 µA
- - 25 µA
- - ±100 nA
- - -5.0 V
- - 0.500
- 24 50 ns
-
74 150
ns
- 138 225 ns
-
61 100
ns
-
-
1700
pF
- - 600 pF
- - 350 pF
- - 1.25 oC/W
1.67 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -10A
- - 1.4 V
Reverse Recovery Time
trr ISD = -10A, dlSD/dt = 100A/µs - 210 -
ns
NOTES:
2. Pulsed: Pulse Duration = 300µs Max, Duty Cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2


Part Number RFP10P15
Description -10A/ -150V/ 0.500 Ohm/ P-Channel Power MOSFET
Maker Intersil Corporation
Total Page 5 Pages
PDF Download

RFP10P15 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 RFP10P12 (RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
GE Solid State
2 RFP10P15 -10A/ -150V/ 0.500 Ohm/ P-Channel Power MOSFET
Intersil Corporation
3 RFP10P15 (RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
GE Solid State





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy