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Intersil Electronic Components Datasheet

RFP30P06 Datasheet

30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs

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RFP30P06 pdf
RFG30P06, RFP30P06, RF1S30P06SM
Data Sheet
July 1999 File Number 2437.3
30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA09834.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG30P06
TO-247
RFG30P06
RFP30P06
TO-220AB
RFP30P06
RF1S30P06SM
TO-263AB
F1S30P06
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 30A, 60V
• rDS(ON) = 0.065
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-133
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP30P06 Datasheet

30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs

No Preview Available !

RFP30P06 pdf
RFG30P06, RFP30P06, RF1S30P06SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFG30P06, RFP30P06
RF1S30P06SM
-60
-60
±20
30
Refer to Peak Current Curve
Refer to UIS Curve
135
0.9
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
Qg(TOT)
Qg(-10)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = -60V, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = -30A, VGS = -10V (Figure 9)
VDD = -30V, ID = 15A, RL = 2.00, VGS = -10V
RG = 6.25
(Figure 13)
-60
-2
-
-
-
-
-
-
-
--V
- -4 V
- -1 µA
- -25 µA
- ±100 nA
- 0.065
- 80 ns
15 -
ns
23 -
ns
- 28 - ns
- 18 - ns
- - 100 ns
VGS = 0 to -20V
VGS = 0 to -10V
VGS = 0 to -2V
VDD = -48V, ID = 30A,
RL = 1.6Ω,
IG(REF) = 1.6mA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
- 140 170 nC
- 70 85 nC
- 5.5 6.6 nC
- 3200 -
pF
- 800 -
pF
TO-220, TO-263
TO-247
- 175 -
pF
- - 1.11 oC/W
- - 62 oC/W
30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTE:
VSD
ISD = -30A
tRR ISD = -30A, dISD/dt = -100A/µs
- - -1.5
- - 150
2. Pulse test: pulse width 300µs maximum, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
MAX
V
ns
4-134


Part Number RFP30P06
Description 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
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RFP30P06 pdf
RFP30P06 Datasheet PDF
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