RFW2N06RLE Datasheet 2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET

Manufacturer: Intersil (now Renesas)

RFW2N06RLE 2a/ 60v/ 0.160 ohm/ logic level/ n-channel power mosfet by Intersil (now Renesas) - Datasheet Preview

Datasheet Details

Part number	RFW2N06RLE
Manufacturer	Intersil (now Renesas)
File Size	41.54 KB
Description	2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET
Datasheet	RFW2N06RLE Datasheet

Overview

RFW2N06RLE Data Sheet July 1999 File Number 2838.3 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

The RFW2N06RLE was designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor and relay drivers and emitter switches for bipolar transistors.

Key Features

2A, 60V.
rDS(on) = 0.160Ω.
UIS Rating Curve (Single Pulse).
Design Optimized For 5 Volt Gate Drive.
Can be Driven Directly from CMOS, NMOS, TTL Circuits.
Compatible with Automotive Drive Requirements.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Electrostatic Discharge Protected Ordering Inf.

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